sento
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Silôksida Karbida (SiC) Tokana-Kristaly - Wafer 10×10mm
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Wafer Epitaxial 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC ho an'ny MOS na SBD
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Wafer Epitaxial SiC ho an'ny fitaovana elektrika - 4H-SiC, karazana-N, hakitroky ny lesoka ambany
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Wafer Epitaxial SiC karazana 4H-N, Voltazy avo lenta matetika avo lenta
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Wafers Silicon Carbide 3 santimetatra Madio Avo (Tsy Nodoboka) Sic Substrates Semi-Insulating (HPSl)
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Wafer substrate SiC 4H-N 8 santimetatra Silicon Carbide Dummy Research grade hatevina 500um
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Famokarana Wafer SiC 4H-N/6H-N Fikarohana momba ny fikarohana Sic Dummy grade Diameter 150mm Substrate silikônina karbida
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Wafer voarakotra Au, wafer safira, wafer silikônina, wafer SiC, 2 santimetatra 4 santimetatra 6 santimetatra, hatevin'ny voarakotra volamena 10 nm 50 nm 100 nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C karazana 2inch 3inch 4inch 6inch 8inch
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Substrate Sic silicon carbide 2 santimetatra Karazana 6H-N 0.33mm 0.43mm Famolahana roa sosona 0.33mm 0.43mm Fitondran-tena mafana avo lenta, fanjifana herinaratra ambany
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SiC substrate 3inch 350um hateviny HPSI karazana Prime Grade Dummy grade
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Azo namboarina manokana ny hatevin'ny Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade