sento
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Ingoty 6 santimetatra vita amin'ny Silicon Carbide 4H-SiC Semi-Insulating, kilasy Dummy
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Ingoty SiC karazana 4H savaivony 4 santimetatra 6 santimetatra hatevina 5-10mm Kilasy fikarohana / sarintsariny
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Sic Substrate Silicon Carbide Wafer 4H-N karazana hamafiny avo lenta, mahatohitra harafesina, famolahana kilasy voalohany
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Wafer Silikônina Karbida 2 santimetatra, Karazana 6H-N Kilasy Voalohany, Kilasy Fikarohana, Hatevina 330μm 430μm
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Substrate silikônina karbida 2 santimetatra, 6H-N misy lafiny roa voapoloka, savaivony 50.8mm, kilasy fikarohana momba ny famokarana
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Substrate SiC karazana N Diameter 6 santimetatra Monocrystaline avo lenta sy substrate ambany kalitao
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SiC Composite Substrates Semi-Insulating Diameter 2inch 4inch 6inch 8inch HPSI
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SiC karazana N amin'ny substrates Si Composite Diameter 6inch
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SiC substrate Dia200mm 4H-N sy HPSI Silicon carbide
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Famokarana substrate SiC 3inch Dia76.2mm 4H-N
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SiC substrate P sy D grade Diameter50mm 4H-N 2inch
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Ingoty SiC karazana Dummy 4H-N, 2 santimetatra 3 santimetatra 4 santimetatra 6 santimetatra ny hateviny:＞10mm