Substrate
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SiC substrate 3inch 350um hateviny HPSI karazana Prime Grade Dummy grade
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Azo namboarina manokana ny hatevin'ny Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade
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Ingoty 6 santimetatra vita amin'ny Silicon Carbide 4H-SiC Semi-Insulating, kilasy Dummy
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Ingoty SiC karazana 4H savaivony 4 santimetatra 6 santimetatra hatevina 5-10mm Kilasy fikarohana / sarintsariny
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Vatosoa safira 6 santimetatra Boule safira fotsy kristaly tokana Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N karazana hamafiny avo lenta, mahatohitra harafesina, famolahana kilasy voalohany
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Wafer Silikônina Karbida 2 santimetatra, Karazana 6H-N Kilasy Voalohany, Kilasy Fikarohana, Hatevina 330μm 430μm
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Substrate silikônina karbida 2 santimetatra, 6H-N misy lafiny roa voapoloka, savaivony 50.8mm, kilasy fikarohana momba ny famokarana
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Substrate SIC karazana-p 4H/6H-P 3C-N KARAZANA 4inch 〈111〉± 0.5°Aotra MPD
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SiC karazana-P 4H/6H-P 3C-N 4inch miaraka amin'ny hateviny 350um Kilasy famokarana Kilasy Dummy
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Wafer SiC 4H/6H-P 6 santimetatra, kilasy famokarana kilasy tsy misy MPD, kilasy Dummy
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Wafer SiC karazana-P 4H/6H-P 3C-N 6inch hateviny 350 μm miaraka amin'ny Fironana Fisaka Voalohany