Substrate
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Wafer SOI misy sosona telo misy sosona Silicon-On-Insulator ho an'ny Microelectronics sy Radio Frequency
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Fitaovana insulator SOI amin'ny wafer SOI (Silicon-On-Insulator) silikônina 8-inch sy 6-inch
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6inch SiC Epitaxiy wafer karazana N/P manaiky namboarina manokana
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Wafer seramika alumina 4 santimetatra fahadiovana 99% polykristalinina tsy mora simba hatevina 1mm
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Takelaka SiC saribakoly kilasy 4H-N 8 santimetatra ho an'ny substrate SiC 200mm
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Wafer silikônina dioksida, wafer SiO2 matevina voapoloka, kilasy voalohany ary fitsapana
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Voa SiC 4H-N Dia205mm avy any Shina Monocrystaline kilasy P sy D
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Wafer FZ CZ Si misy tahiry Wafer Silicon 12inch Prime na Test
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Famokarana substrate SiC 4H-N 6inch Dia150mm sy kilasy samirery
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Savaivony 3 santimetatra, hatevin'ny wafer safira 76.2mm, C-plane SSP 0.5mm
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Substrate fanamboarana sandoka 8 santimetatra karazana P/N (100) 1-100Ω
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Wafer SiC Epi 4inch ho an'ny MOS na SBD