sento
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4H-N 8 mirefy SiC substrate wafer Silicon Carbide Dummy Research kilasy 500um hateviny
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4H-N/6H-N SiC Wafer Reasearch famokarana Dummy grade Dia150mm Silicon carbide substrate
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12 mirefy SIC substrate silisiôma carbide prime grade savaivony 300mm lehibe habeny 4H-N Mety amin'ny hery avo fitaovana hafanana dissipation
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HPSI SiC wafer dia: 3 santimetatra hateviny: 350um± 25 µm ho an'ny Power Electronics
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8 mirefy SiC silisiôma carbide wafer 4H-N karazana 0.5mm famokarana kilasy fikarohana kilasy fanao voalavo substrate
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3inch High Purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-karazana SiC substrate SiC wafer Dia2inch vokatra vaovao
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8inch 200mm Silicon Carbide SiC Wafers 4H-N karazana Production grade 500um hatevin'ny
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2 mirefy 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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3 mirefy Purity Avo (Tsy voafehy) Silicon Carbide Wafers semi-insulating Sic substrate (HPSl)
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Au coated wafer, safira wafer, silicone wafer, SiC wafer, 2inch 4inch 6inch, Gold mifono hatevin'ny 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C karazana 2inch 3inch 4inch 6inch 8inch