sento
-
Silicon Carbide SiC Ingot 6inch N karazana Dummy / prime grade hatevin'ny dia azo namboarina
-
SiC Ingot 4H-N karazana Dummy grade 2inch 3inch 4inch 6inch hatevin'ny:>10mm
-
HPSI SiC wafer dia: 3 santimetatra hateviny: 350um± 25 µm ho an'ny Power Electronics
-
3inch High Purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
-
Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
-
2 mirefy 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
-
2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Hatevina
-
2 mirefy silisiôma carbide substrate 6H-N roa sosona poloney savaivony 50.8mm famokarana kilasy fikarohana kilasy
-
N-Type SiC Composite Substrates Dia6inch High quality monocrystaline sy ambany kalitao substrate
-
Semi-Insulation SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
-
P-karazana SiC substrate SiC wafer Dia2inch vokatra vaovao
-
N-Type SiC amin'ny Si Composite substrate Dia6inch