sento
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12 mirefy SIC substrate silisiôma carbide prime grade savaivony 300mm lehibe habeny 4H-N Mety amin'ny hery avo fitaovana hafanana dissipation
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8 mirefy SiC silisiôma carbide wafer 4H-N karazana 0.5mm famokarana kilasy fikarohana kilasy fanao voalavo substrate
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HPSI SiC wafer dia: 3 santimetatra hateviny: 350um± 25 µm ho an'ny Power Electronics
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3inch High Purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-karazana SiC substrate SiC wafer Dia2inch vokatra vaovao
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8inch 200mm Silicon Carbide SiC Wafers 4H-N karazana Production grade 500um hatevin'ny
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2 mirefy 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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SiC substrate SiC Epi-wafer conductive/semi-karazana 4 6 8 santimetatra
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SiC Epitaxial Wafer ho an'ny fitaovana herinaratra - 4H-SiC, N-karazana, ambany kilema ambany
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4H-N karazana SiC Epitaxial Wafer High Voltage High Frequency
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3 mirefy Purity Avo (Tsy voafehy) Silicon Carbide Wafers semi-insulating Sic substrate (HPSl)
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4H-N 8 mirefy SiC substrate wafer Silicon Carbide Dummy Research kilasy 500um hateviny