sento
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4H-N 8 mirefy SiC substrate wafer Silicon Carbide Dummy Research kilasy 500um hateviny
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4H-N/6H-N SiC Wafer Reasearch famokarana Dummy grade Dia150mm Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N karazana Production grade 500um hatevin'ny
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HPSI SiC wafer dia: 3 santimetatra hateviny: 350um± 25 µm ho an'ny Power Electronics
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8 mirefy SiC silisiôma carbide wafer 4H-N karazana 0.5mm famokarana kilasy fikarohana kilasy fanao voalavo substrate
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3inch High Purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-karazana SiC substrate SiC wafer Dia2inch vokatra vaovao
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2 mirefy 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (Semi-Insulation avo lenta) 4H/6H-P 3C -n karazana 2 3 4 6 8inch misy
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2 mirefy Sic silisiôma carbide substrate 6H-N Karazana 0.33mm 0.43mm lafiny roa polishing High thermal conductivity fanjifàna herinaratra ambany
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SiC substrate 3inch 350um hatevin'ny HPSI karazana Prime Grade Dummy
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Silicon Carbide SiC Ingot 6inch N karazana Dummy / prime grade hatevin'ny dia azo namboarina