Substrate
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Substrate SIC 12 santimetatra misy silikônina karbida, savaivony 300mm, habe lehibe 4H-N, mety amin'ny fitaovana mahery vaika mamoaka hafanana.
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Vato fisaka safira matevina 300x1.0mmt C-Plane SSP/DSP
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HPSI SiC wafer diam: 3inch hateviny: 350um± 25 µm ho an'ny Elektronika Herinaratra
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Vatosoa safira 8 santimetatra 200mm, hatevin'ny vatosoa safira manify 1SP 2SP 0.5mm 0.75mm
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Wafer silikônina karbida SiC 8 santimetatra karazana 4H-N 0.5mm karazana famokarana, substrate voapoloka namboarina manokana, kilasy fikarohana
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Vatosoa safira kristaly tokana Al2O3 99.999% Dia200mm, hatevina 1.0mm 0.75mm
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Safira Wafer 156mm 159mm 6 santimetatra ho an'ny C-Plane DSP TTV
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Wafer safira C/A/M 4 inch kristaly tokana Al2O3, SSP DSP substrate safira mafy orina
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Wafer SiC 3 santimetatra, madio tsara, semi-insulating (HPSI), kilasy voalohany 350um
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Vokatra vaovao SiC karazana-P wafer SiC Diameter2inch
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Wafer SiC Silicon Carbide 8 santimetatra 200mm karazana 4H-N, hatevina 500um
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer, Tariby Konduktiva Voapoloka Roa, Kilasy Voalohany Mos