substrate
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Silicon Carbide SiC Ingot 6inch N karazana Dummy / prime grade hatevin'ny dia azo namboarina
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SiC Ingot 4H-N karazana Dummy grade 2inch 3inch 4inch 6inch hatevin'ny:>10mm
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HPSI SiC wafer dia: 3 santimetatra hateviny: 350um± 25 µm ho an'ny Power Electronics
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3inch High Purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2 mirefy 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Hatevina
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2 mirefy silisiôma carbide substrate 6H-N roa sosona poloney savaivony 50.8mm famokarana kilasy fikarohana kilasy
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p-karazana 4H/6H-P 3C-N TYPE SIC substrate 4 mirefy 〈111〉± 0.5°Zero MPD
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SiC substrate P-karazana 4H/6H-P 3C-N 4inch miaraka amin'ny hatevin'ny 350um Famokarana kilasy Dummy kilasy
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-karazana SiC wafer 4H/6H-P 3C-N 6 mirefy hateviny 350 μm miaraka amin'ny Primary Flat Orientation