Substrate
-
Savaivony 3 santimetatra, hatevin'ny wafer safira 76.2mm, C-plane SSP 0.5mm
-
Substrate fanamboarana sandoka 8 santimetatra karazana P/N (100) 1-100Ω
-
Wafer SiC Epi 4inch ho an'ny MOS na SBD
-
Vatomamy C-Plane Safira 12 santimetatra SSP/DSP
-
Wafer silikônina FZ karazana N 2 santimetatra 50.8mm SSP
-
Vatosoa SiC 2 santimetatra Dia 50.8mmx10mmt 4H-N monokristal
-
Boule Saphire C-plane 200kg 99.999% 99.999% fomba KY monokristaline
-
Wafer silikônina 4 santimetatra FZ CZ Karazana N DSP na SSP kilasy fitsapana
-
Wafer SiC 4 santimetatra, SiC 6H semi-insulating, kilasy voalohany, fikarohana ary dummy
-
Wafer substrate HPSI SiC 6 santimetatra, wafers Silicon Carbide SiC semi-insulting
-
Wafer SiC semi-insulting 4 santimetatra HPSI SiC substrate Prime Production grade
-
Wafer substrate 4H-Semi SiC 3 santimetatra 76.2mm, wafers SiC semi-insulting Silicon Carbide,